data sheet: june 2012 - 1 of 5 - disclaimer: subject to change with out notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ah2 high dynamic range amplifier product features ? 50 ? 1000 mhz ? +40 dbm oip3 ? -71dbc ctb ? -48dbc cso ? 3.5 db noise figure ? 14.5 db gain ? +20 dbm p1db ? lead-free/green/ rohs-compliant sot-89 package ? single +5 v supply ? mttf > 100 years applications ? catv / dbs product description the ah2 is a general purpose, high dynamic range amplifier targeting cable tv markets. the combination of gain flatness, high linearity and bandwidth make it ideal for catv distribution, cable modem and laser diode driver applications. the ah2 is designed for 75 ohm systems and can operate directly from a +5 volt dc regulator. the device is manufactured using reliable gaas mesfet technology and boasts an mtbf of >100 years at a mounting temperature of +85 c. it is available in the environmentally-friendly lead-free/green/rohs-compliant sot-89 package. all devices are 100% rf and dc tested. functional diagram rf in gnd rf out gnd 1 2 3 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 50 1000 test frequency mhz 800 gain db 13 14.5 input return loss db 14 output return loss db 17 output p1db dbm +21 output ip3 (2) dbm +37 +40 noise figure db 3.5 operating current range ma 120 150 180 supply voltage v 5 1. test conditions unless otherwise noted: t = 25 oc, 50 system. 2. 3oip measured with two tones at an output power of +5 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +150 c supply voltage +6 v rf input power (continuous) +10 dbm junction temperature +220 c operation of this device above any of these paramet ers may cause permanent damage. typical performance (3) parameter units typical frequency mhz 100 860 s21 db 14.5 13.2 s11 db -14 -14 s22 db -17 -17 output p1db dbm +20 +20 output ip3 (2) dbm +40 +40 output ip2 (2) dbm +52 +52 ctb (4) dbc -71 cso (4) dbc -48 xmod (4) dbc -65 noise figure db 3.5 3.5 supply voltage v 5 device current ma 150 3. parameters reflect performance in a single-ende d 75 ohm circuit, as shown on page 3. 4. 77 channels 50 ? 550mhz +34dbmv/channel, flat-l oading ordering information part no. description AH2-G high dynamic range amplifier (lead-free/green/rohs-compliant sot-89 package) ah2-pcb single-ended 75 ohm application circuit boa rd
data sheet: june 2012 - 2 of 5 - disclaimer: subject to change with out notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ah2 high dynamic range amplifier typical device data s-parameters (v ds = +5 v, i ds = 150 ma, t = 25 c, unmatched device in a 75 ohm system) s-parameters (v d = +5 v, i d = 150 ma, t = 25 c, calibrated to device leads in a 75 ohm system) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -17.85 -34.21 14.88 172.97 -24.58 4.81 -20.87 -1 49.34 100 -18.10 -38.37 14.92 171.11 -24.56 2.30 -21.20 - 158.61 150 -17.37 -47.65 14.89 168.59 -24.55 1.69 -21.20 - 160.06 200 -16.63 -55.66 14.74 165.97 -24.53 1.17 -20.82 - 159.44 250 -15.73 -62.92 14.86 162.85 -24.48 0.72 -20.50 - 156.95 300 -14.91 -70.31 14.61 160.05 -24.45 0.58 -20.36 - 155.78 350 -14.20 -76.37 14.64 157.30 -24.42 0.44 -19.77 - 155.09 400 -13.45 -81.85 14.62 154.45 -24.34 0.16 -19.23 - 152.65 450 -12.80 -86.94 14.60 151.27 -24.31 -0.28 -19.02 -152.33 500 -12.18 -91.91 14.53 148.33 -24.32 -0.47 -18.49 -151.93 550 -11.53 -95.72 14.34 146.02 -24.21 -0.94 -17.96 -149.07 600 -11.04 -99.60 14.26 143.33 -24.18 -1.00 -17.84 -148.36 650 -10.51 -103.27 14.19 140.39 -24.12 -1.10 -17.56 -149.69 700 -10.02 -106.94 14.10 137.75 -24.11 -1.54 -16.97 -149.32 750 -9.64 -110.30 14.02 134.99 -24.02 -2.04 -16.69 -148.96 800 -9.22 -113.34 13.96 132.29 -23.93 -2.63 -16.42 -148.88 850 -8.81 -116.55 13.83 129.84 -23.89 -3.12 -16.13 -149.30 900 -8.48 -119.17 13.69 127.70 -23.85 -3.33 -15.87 -149.09 950 -8.11 -121.84 13.54 125.28 -23.81 -4.08 -15.59 -149.60 1000 -7.81 -124.91 13.44 122.82 -23.77 -4.42 -15.42 -150.68 device s-parameters are available for download off of the website at: http://www.wj.com input / output return loss & isolation -30 -25 -20 -15 -10 -5 0 0 200 400 600 800 1000 frequency (mhz) magnitude (db) s11 s12 s22 gain 10 11 12 13 14 15 0 200 400 600 800 1000 frequency (mhz) s21 (db)
data sheet: june 2012 - 3 of 5 - disclaimer: subject to change with out notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ah2 high dynamic range amplifier single ? ended catv 75 ? evaluation circuit: 50 ? 860 mhz (ah2-pcb) typical rf performance at 25 c frequency mhz 100 450 860 s21 ? gain db 14.5 14.5 13.2 s11 ? input r.l. db -11.1 -12.7 -18.3 s22 ? output r.l. db -9.5 -22.9 -10.6 output ip2 (+5 dbm) dbm 52.7 53.5 52.5 output ip3 (+5 dbm / tone, 10 mhz spacing) dbm 39.8 40.7 40.8 noise figure db 3.9 3.1 3.2 device bias +5v @ 150ma ctb dbc -71 cso dbc -48 xmod dbc -65 77 channels, 50-550mhz, +34dbmv/channel flat loading ind id=l1 l=12 nh ind id=l3 l=270 nh cap id=c4 c=1000 pf cap id=c3 c=1000 pf cap id=c1 c=1000 pf cap id=c2 c=2.2 pf subckt id=s1 net="ah2" port p=1 z=75 ohm port p=2 z=75 ohm +5 v circuit board material: .062? total thickness with a .028? fr-4 top rf layer, 4 layers (other layers added for rigidity), 1 oz copper, 75 microstrip. linearity vs. frequency 0 10 20 30 40 50 60 0 200 400 600 800 1000 frequency (mhz) intercept point (dbm) oip3 oip2 input / output return loss and isolation -30 -20 -10 0 0 200 400 600 800 1000 frequency (mhz) magnitude (db) s11 s12 s22 gain 13 13.5 14 14.5 15 15.5 16 0 200 400 600 800 1000 frequency (mhz) magnitude (db) s21 -40c s21 25c s21 85c ctb, cso, and xmod vs. frequency -80 -70 -60 -50 -40 0 100 200 300 400 500 600 frequency (mhz) dbc ctb cso xmod 77 channel flat loading, +34 dbmv/ch. noise figure 0 1 2 3 4 5 0 200 400 600 800 1000 frequency (mhz) noise figure (db) ip2 and ip3 vs. power out at 450 mhz 25 30 35 40 45 50 55 -4 -2 0 2 4 6 8 10 output power (dbm) intercept point (dbm) ip2 ip3
data sheet: june 2012 - 4 of 5 - disclaimer: subject to change with out notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ah2 high dynamic range amplifier push-pull, 75 ? catv reference design: 50 ? 860 mhz bias vdd = 5 v, id = 300ma frequency mhz 100 450 750 860 s21 db 11.1 10.8 10.6 10.5 s11 db -10.2 -9.7 -10.8 -11 s22 db -13.3 -14.1 -15.4 -16.4 output ip2 dbm 72 70 72 70 output ip3 dbm 42 43 41 40 noise figure db 5.5 4.3 5.0 5.4 ctb dbc -72 cso dbc -75 xmod dbc -68 77 channels, 50-550mhz, +34dbmv/channel flat loading s-parameters -20 -15 -10 -5 0 5 10 15 0 200 400 600 800 1000 frequency (mhz) return loss (db) s21 s11 s22 linearity vs. frequency 0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 frequency (mhz) intercept point (dbm) oip3 oip2 ctb, cso, and xmod vs. frequency -80 -75 -70 -65 -60 0 100 200 300 400 500 600 frequency (mhz) dbc ctb cso xmod 77 channel flat loading, +34 dbmv/ch. output power
data sheet: june 2012 - 5 of 5 - disclaimer: subject to change with out notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? ah2 high dynamic range amplifier AH2-G (green / lead-free sot-89 package) mechanical information this package is lead-free/green/rohs-compliant. it is compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating m aterial on the leads is nipdau. outline drawing land pattern thermal specifications parameter rating operating case temperature -40 to +85 c thermal resistance, rth (1) 59 c / w junction temperature, tj (2) 129 c 1. the thermal resistance is referenced from the ho ttest part of the junction to the ground tab (pin 4). 2. this corresponds to the typical biasing conditio n of +5v, 150 ma at an 85 c case temperature. a minimum mttf of 1 million hours is achieved for junction temperatures below 160 c. product marking the AH2-G will be marked with an ?ah2g? designator. an alphanumeric lot code (?xxxx-x?) is also marked below the part designator on the top surface of the package. the obsolete tin-lead package is marked with an ?ah2? designator followed by an alphanumeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1b value: passes 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 1 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35m m (#80 / .0135?) diameter drill and have a final plat ed thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink . 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. mttf vs. gnd tab temperature 1 10 100 1000 60 70 80 90 100 110 tab temperature (c) m t t f (m illi o n h r s )
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